2017 Uniform Si Epitaxy

57. J. -E. Hong, N. Kim, H. Yoon, Y. H. Jo, D. S. Kim, K. Seo*, and K. -H. Kim* "Growth Uniformity of Epitaxy Silicon Grown at 200 °C  Using 60 MHz Very High Frequency Plasma Enhanced Vapor Phase Epitaxy" J. Nanosci. Nanotechnol. 2017, 17, 8534.